Incorporation of hydrogen in porous silicon nanocrystallites

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 5, 2007, Pages 1307-1311

  Lysenko, V ^a   Alekseev, S ^b   Botsoa, J ^a   Barbier, D ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN INCORPORATION; PHENOMENOLOGICAL MODELS; POROUS LAYERS; POROUS SILICON (PS) NANOSTRUCTURES;

ANODIC OXIDATION; CHEMICAL RELAXATION; ELECTROCHEMICAL PROPERTIES; HYDROGEN; PHOTOLUMINESCENCE; POROUS SILICON;

NANOCRYSTALLITES;

EID: 34547223632     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200674322     Document Type: Article

References (8)

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7. G. Dolino and D. Bellet, in: Properties of Porous Silicon, edited by L. T. Canham (LNSPEC, The IEE, London, United Kingdom, 1997), p. 118.
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