Optical measurement of carrier concentration profile in n-type semiconducting GaAs substrate

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 4, 2007, Pages 1002-1007

  Kitamoto, Takuya ^a   Inoue, Yusuke ^a   Yamada, Masayoshi ^a   Kawase, Tomohiro ^b  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLING; OPTICAL MEASUREMENT; SPATIAL RESOLUTION; TRANSMITTANCE;

CARRIER CONCENTRATION; DOPING (ADDITIVES); ENERGY GAP; LIGHT ABSORPTION; SILICON;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34547217569     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200674160     Document Type: Conference Paper

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