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EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 357-361

Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping

(6) Wellmann, P J a Albrecht, A a Kunecke U a Birkmann, B b Mueller, G a,b Jurisch, M c

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

c FREIBERGER COMPOUND MATERIALS GMBH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CARRIER CONCENTRATION; CHARGE CARRIERS; CONCENTRATION (PROCESS); DOPING (ADDITIVES); GALLIUM; LIGHT ABSORPTION; OPTICAL PROPERTIES; THIN FILMS;

ABSORPTION MAPPINGS; III-V SEMICONDUCTORS; OPTICAL PROPERTIES OF BULK MATERIALS AND THIN FILMS; SUBSTRATE FABRICATION;

SEMICONDUCTOR MATERIALS;

EID: 10344240385 PISSN: 12860042 EISSN: None Source Type: Journal
DOI: 10.1051/epjap:2004041 Document Type: Conference Paper

Times cited : (6)

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