Heteroepitaxy of polycrystalline 3C-SiC film on Si substrate using AlN buffer layer

Electronics Letters

Volumn 43, Issue 15, 2007, Pages 832-834

  Chung, G S ^a   Kim, K S ^a  

^a University of Ulsan   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; ELECTRON MOBILITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HALL EFFECT; SILICON CARBIDE; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

GROWTH TEMPERATURES; SURFACE CHEMICAL COMPOSITION;

POLYCRYSTALLINE MATERIALS;

EID: 34547206057     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20071263     Document Type: Article

References (7)

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6. Sha, Z.D., Wu, X.M., and Zhuge, L.J.: ' The structure and optical properties of SiC film on Si(111) substrate with a ZnO buffer layer by RF-magnetron sputtering technique ', Phys. Lett. A, 2006, 355, p. 228-232 10.1016/j.physleta.2006.01.105 0375-9601
7. Gupta, A., Paramanik, D., Varma, S., and Jacob, C.: ' CVD growth and characterization of 3C-SiC thin films ', Bull. Mater. Sci., 2004, 27, p. 445-451 0250-4707