Comparison of AlN thin films grown on sapphire and cubic-SiC substrates by LP-MOCVD

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 410-414

  Tanaka, Y ^a   Hasebe, Y ^a   Inushima, T ^a   Sandhu, A ^a   Ohoya, S ^b  

^a TOKAI UNIVERSITY   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE;

ALUMINUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0034140995     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00581-3     Document Type: Article

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