Surface metal contamination during ion implantation: Comparison of measurements by secondary ion mass spectroscopy, total reflection x-ray fluorescence spectrometry, and vapor phase decomposition used in conjunction with graphite furnace atomic absorption spectrometry and inductively coupled plasma mass spectrometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 329-335

  Frost, Michael R ^a   Harrington, William L ^a   Downey, Daniel F ^b   Walther, Steven R ^b  

^a Evans East   (United States)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ARSENIC; BORON COMPOUNDS; CONTAMINATION; DECOMPOSITION; METALS; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SURFACES; X RAY SPECTROSCOPY;

GRAPHITE FURNACE ATOMIC ABSORPTION SPECTROSCOPY; INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY; SURFACE METAL CONTAMINATION; TOTAL REFLECTION X RAY FLUORESCENCE SPECTROMETRY; VAPOR PHASE DECOMPOSITION;

ION IMPLANTATION;

EID: 4243084846     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588470     Document Type: Review

References (4)

1. P. Van der Meulen and F. Ammon, in Proceedings of IIT92, edited by D. Downey, M. Farley, K. Jones, and G. Ryding (Elsevier Science, New York, 1993), pp. 393-396.
2. D. F. Downey and G. Angel, Nucl. Instrum. Methods B 96, 68 (1995).
3. M. R. Frost, in Proceedings of the Symposium on Contamination Control and Defect Reduction in Semiconductor Manufacturing III, edited by D. Schmidt, D. Reedy, R. Guldi, and J. Martinez (Electrochemical Society, Pennington, NJ, 1994), pp. 339-348.
4. S. P. Smith, in Proceedings of the SIMS IX Conference, Yokohama, Japan, edited by A. Benninghoven, Y. Nihei, R. Shimizu, and H. Werner (Wiley, Chichester, UK, 1994), pp. 476-479.