Applications of heavy ion microprobe for single event effects analysis

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 261, Issue 1-2 SPEC. ISS., 2007, Pages 443-446

  Reed, Robert A ^a   Vizkelethy, Gyorgy ^b   Pellish, Jonathan A ^a   Sierawski, Brian ^a   Warren, Kevin M ^a   Porter, Mark ^c   Wilkinson, Jeff ^d   Marshall, Paul W ^e   Niu, Guofu ^f   Cressler, John D ^g   Schrimpf, Ronald D ^a   Tipton, Alan ^a   Weller, Robert A ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c MEDTRONIC INC   (United States)

^d MEDTRONIC   (United States)

^e Brookneal   (United States)

^f AUBURN UNIVERSITY   (United States)

^g GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Focused ion beam; Radiation effects in semiconductors

Indexed keywords

HEAVY ION MICROPROBE; MICROELECTRONIC CIRCUIT; RADIATION EFFECTS IN SEMICONDUCTORS; ROGUE CHARGE CARRIERS; SEE MODELING; SINGLE EVENT EFFECTS;

CHARGE CARRIERS; COMPUTER SIMULATION; FOCUSED ION BEAMS; HEAVY IONS; ION MICROSCOPES; IONIZING RADIATION;

NUCLEAR PHYSICS;

EID: 34447253584     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.04.163     Document Type: Article

References (9)

1. In: Schrimpf R.D., and Fleetwood D.M. (Eds). Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices (2004), World Scientific, Singapore
2. Sexton F.W. Microbeam studies of single-event effects. IEEE Trans. Nucl. Sci. 43 2 (1996) 687
3. DESSIS Device Simulator, Synopsys Inc., 700 East Middlefield Road, Mountain View, CA 94043. .
4. Reed R.A., Marshall P.W., Pickel J.C., Carts M.A., Fodness B., Niu G., Fritz K., Vizkelethy G., Dodd P.E., Irwin T., Cressler J.D., Krithivasan R., Riggs P., Prairie J., Randall B., Gilbert B., and LaBel K.A. Heavy-ion broad-beam and microprobe studies of single-event upsets in a 0.20 μm SiGe heterojunction bipolar transistors and circuits. IEEE Trans. Nucl. Sci. 50 6 (2003) 2184
5. Marshall P.W., Carts M., Currie S., Reed R.A., Randall B., Fritz K., Kennedy K., Berg M., Krithivasan R., Siedleck C., Ladbury R., Marshall C., Cressler J.D., Niu G., LaBel K., and Gilbert B. Autonomous bit error rate testing at multi-Gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST). IEEE Trans. Nucl. Sci. 52 6 (2005) 2446
6. Niu G., Krithivasan R., Cressler J.D., Riggs P.A., Randall B.A., Marshall P.W., Reed R.A., and Gilbert B. A comparison of SEU tolerance in high-speed SiGe HBT digital logic designed with multiple circuit architectures. IEEE Trans. Nucl. Sci. 49 (2002) 3107
7. Varadharajaperumal M., Niu G., Cressler J.D., Reed R.A., and Marshall P.W. Three-dimensional simulation of heavy-ion induced charge collection in SiGe HBTs on SOI. IEEE Trans. Nucl. Sci. 51 6 (2004) 3298
8. Amusan O.A., Witulski A.F., Massengill L.W., Bhuva B.L., Fleming P.R., Alles M.L., Sternberg A.L., Black J.D., and Schrimpf R.D. Charge collection and sharing in a 130 nm CMOS technology. IEEE Trans. Nucl. Sci. 53 6 (2006) 3253
9. Tipton A.D., Pellish J.A., Reed R.A., Schrimpf R.D., Weller R.A., Mendenhall M.H., Sierawski B., Sutton A.K., Diestelhorst R.M., Espinel G., Cressler J.D., Marshall P.W., and Vizkelethy G. Multiple-bit upset in 130 nm CMOS technology. IEEE Trans. Nucl. Sci. 53 6 (2006) 3259