Focused ion beam micromachining of GaN photonic devices

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Chyr, Irving ^a   Steckl, A J ^a  

^a University of Cincinnati   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; FABRICATION; ION BEAMS; MASKS; MIRRORS; REACTIVE ION ETCHING; SECONDARY ION MASS SPECTROMETRY; SURFACE ROUGHNESS;

OPTICAL LOSSES; OPTICAL MASKS;

GALLIUM NITRIDE;

EID: 3442901444     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300003604     Document Type: Conference Paper

References (13)

1. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1678 (1994).
2. J. Edgar, J. Mater. Res. 7, 235 (Jan. 1992).
3. M. A. Khan, D. T. Olson, J. M. Van Hove, and J. N. Kuznia, Appl. Phys. Lett. 58, 1515 (1991).
4. F. Binet, J. Y. Duboz, N. Laurent, C. Bonnat, P. Collot, F. Hanauer, O. Briot, and R. L. Aulombard, Appl. Phys. Lett. 72, 960 (1998).
5. G. M. Smith, J. S. Hughes, M. L. Osowski, D. V. Forbes, and J. J. Coleman, Electron. Lett. 30, 30 (1990).
6. D. Hofstetter, H. P. Zappe, J. E. Epler, and J. Söchtig, Electron. Lett. 30, 1858 (1990).
7. T. Baba, M. Hamasaki, N. Watanabe, P. Kaewplung, A. Matsutani, T. Mukaihara, F. Koyama, and K. Iga, Jpn. J. Appl. Phys. Part 1, 35(2B), 1390 (1996).
8. Y. Yuan, T. Brock, P. Bhattacharya, C. Caneau and R. Bhat, IEEE Photonics Technol. Lett., 9(7), 881 (1997).
9. T. F. Krauss, O. Painter, A. Scherer, J. S. Roberts, and R. M. De La Rue, Opt. Eng., 37(4), 1143 (1998).
10. L. R. Harriott and H. Temkin, Chapter 6 in Integrated Optoelectronics, edited by M. Dagenais, R. F. Leheny, and J. Crow, (Academic Press, New York, 1995).
11. A. J. Steckl, P. Chen, H. E. Jackson, A. G. Choo, X. Cao, J. T. Boyd, and M. Kumar, J. Vac. Sci. Technol. B13, 2570 (1995).
12. T. Ito, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno, Jpn. J. Appl. Phys. Part 1, 36(12B), 7710 (1997).
13. H. Katoh, T. Takeuchi, C. Anbe, R. Mizumotos, S. Yamaguchi, C. Weitzel, H. Amano, I. Akasaki, Y. Kaneko, N. Yamado, Jpn. J. Appl. Phys. Part 2, 36(4B), L444 (1998).