Microstructural evolution and dielectric properties of SiO2-doped CaCu3Ti4O12 ceramics

Journal of the European Ceramic Society

Volumn 27, Issue 13-15, 2007, Pages 3991-3995

  Kim, Kang Min ^a   Kim, Sun Jung ^a   Lee, Jong Heun ^a   Kim, Doh Yeon ^b  

^a Korea University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

CaCu3Ti4O12; Dielectric properties; Grain boundaries; Grain growth

Indexed keywords

ADDITION REACTIONS; COARSENING; GRAIN BOUNDARIES; GRAIN GROWTH; MICROSTRUCTURAL EVOLUTION; PERMITTIVITY; SILICA;

ABNORMAL GRAIN GROWTH; INTERGRANULAR PHASE;

CERAMIC MATERIALS;

ADDITION REACTIONS; CERAMIC MATERIALS; COARSENING; GRAIN BOUNDARIES; GRAIN GROWTH; MICROSTRUCTURAL EVOLUTION; PERMITTIVITY; SILICA;

EID: 34347369133     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2007.02.081     Document Type: Article

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