New method for depth-profiling of shallow layers in silicon wafers by repeated chemical etching and total-reflection X-ray fluorescence analysis

Spectrochimica acta, Part B: Atomic spectroscopy

Volumn 54, Issue 10, 1999, Pages 1385-1392

  Klockenkamper R ^a   Von Bohlen, A ^a  

^a LEIBNIZ INSTITUT FÜR ANALYTISCHE WISSENSCHAFTEN ISAS E V   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; CRYSTAL ATOMIC STRUCTURE; DISSOLUTION; EMISSION SPECTROSCOPY; ERROR ANALYSIS; ETCHING; FLUORESCENCE; ION IMPLANTATION; LIGHT REFLECTION; OXIDATION; SPECTROMETRY; X RAY SPECTROSCOPY;

DEPTH PROFILING; DETECTION LIMITS; TOTAL-REFLECTION X RAY FLUORESCENCE (TXRF) SPECTROMETRY;

SILICON WAFERS;

EID: 0342321927     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0584-8547(99)00066-X     Document Type: Article

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