Effect of N2-gas partial pressure on the structure and properties of copper nitride films by DC reactive magnetron sputtering

Plasma Science and Technology

Volumn 9, Issue 2, 2007, Pages 147-151

  Liu, Zuli ^a   Li, Xing'Ao ^a,b   Zuo, Anyou ^b   Yuan, Zuobin ^b   Yang, Jianping ^b   Yao, Kailun ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUBEI UNIVERSITY FOR NATIONALITIES   (China)

Author keywords

Cu3N film; DC magnetron sputtering; N2 gas partial pressure; Resistivity

Indexed keywords

COPPER COMPOUNDS; FILM GROWTH; MAGNETRON SPUTTERING; X RAY DIFFRACTION ANALYSIS;

DC MAGNETRON SPUTTERING; DEPOSITION RATE; N2-GAS PARTIAL PRESSURE;

METALLIC FILMS;

EID: 34347226759     PISSN: 10090630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-0630/9/2/06     Document Type: Article

References (13)

1. Nosaka T, Yoshitake M, Okamoto A, et al 1999 Thin Solid Films 348 8
2. Maruyama T, Morishita T 1996 Appl. Phys. Lett. 69 890
3. Asano M, Umeda K, Tasaki A 1990 Jpn. J. Appl. Phys. 29 1985
4. Hahn U, Weber W 1996 Phys. Rev. B 53 12684
5. Wang D, Nakamine N, Hayashi Y 1998 J. Vac. Sci. Technol. A 16 2084
6. Liu Z Q, Wang W J, Wang T M, et al 1998 Thin Solid Films 325 55
7. Yue G H, Yan P X, Wang J 2005 J. Crystal Growth 274 464
8. Maya L. 1993 J. Vac. Sci. Technol., A, 11 603
9. Terada S, Tanaka H, Kubota K 1989 J. Crystal Growth 94 567
10. Borsa D M, Boerma D O 2004 Surf. Sci. 548 95
11. Klug P, Alexander L E (Ed.). 1974 X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials, Second Ed. New York: Wiley. pp.687-780
12. Hones P, Zakri C, Schmid P E,et al 2000 Appl. Phys. Lett. 76 3194
13. Wu Z G, Zhang W W, Bai L F, et al 2005 Acta Phys.Sin. 54 1687(in Chinese)