Gas cluster Ge infusion for Si(1-x) Ge (x) strained-layer applications

Materials Research Society Symposium Proceedings

Volumn 958, Issue , 2007, Pages 113-118

  Tetreault, Thomas G ^a   Shao, Yan ^a   Huang, Mengbing ^b   Hautala, John ^a  

^a Epion Corporation   (United States)

^b SUNY POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; HIGH CONCENTRATION GRADIENTS; INFUSION; MATERIAL PROPERTIES; ROOM TEMPERATURE;

EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

ION BEAMS;

EID: 34347212501     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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