Study of the defects in sintered SnO2 by high-resolution transmission electron microscopy and cathodoluminescence

European Journal of Inorganic Chemistry

Volumn , Issue 11, 2007, Pages 1544-1548

  Maestre, David ^a   Ramírez Castellanos, Julio ^a   Hidalgo, Pedro ^a   Cremades, Ana ^a   González Calbet, José M ^a   Piqueras, Javier ^a  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Luminescence; Microstructure; Resistivity; Semiconductors

Indexed keywords

CATHODOLUMINESCENCE; OXYGEN VACANCIES; SINTERING; STACKING FAULTS; WIDE BAND GAP SEMICONDUCTORS;

ANNEALING PROCESS; CATHODOLUMINESCENCE SPECTRA; DEFECTS STRUCTURE; ELECTRICAL MEASUREMENT; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERGROWTH; INTERSTITIALS; OXYGEN ATMOSPHERE; RESISTIVITY; SINTERED SAMPLES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 34250846460     PISSN: 14341948     EISSN: 10990682     Source Type: Journal    
DOI: 10.1002/ejic.200600990     Document Type: Article

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