A 3-10 GHz low-noise amplifier for ultra-wideband applications

4th International IEEE North-East Workshop on Circuits and Systems, NEWCAS 2006 - Conference Proceedings

Volumn , Issue , 2006, Pages 9-12

  Moez, Kambiz K ^a   Elmasry, Mohamed I ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Low noise amplifiers; S parameters; Ultra wideband

Indexed keywords

CAPACITORS; DRAIN CURRENT; RESONANCE; SCATTERING PARAMETERS; TRANSISTORS;

LOW-NOISE AMPLIFIERS; POWER GAIN; ULTRA WIDEBAND;

POWER AMPLIFIERS;

EID: 34250771056     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NEWCAS.2006.250907     Document Type: Conference Paper

References (5)

1. D. K. Shaeffer and T. H. Lee, "A 1.5 V, 1.5 GHz CMOS low noise amplifier," IEEE J. Solid-State Circuits, vol. 32, no. 5, pp. 745-759, May 1997.
2. C. W. Kim, M. S. Kang, P. T. Anh, H. T. Kim, and S. G. Lee, "An Ultra-Wideband CMOS Low Noise Amplifier for 3 - 5-GHz UWB System," IEEE J. Solid-State Circuits, vol. 40, no. 2, pp. 544-547, Feb 2005.
3. A. Bevilaequa and A. M. Niknejad, "An Ultrawideband CMOS Low-Noise Amplifier for 3. 1 - 10. 6-GHz Wireless Receivers," IEEE J. Solid-State Circuits, vol. 39, no. 12, pp. 2259-2268, Dec 2004.
4. S. S. Mohan, M. D. M Hershenson, S. P. Boyd, and T. H. Lee, "Bandwidth extension in CMOS with optimized on-chip inductors," IEEE J. Solid-State Circuits, vol. 35, no. 3, pp. 346-355, Mar 2002.
5. S. Gala and B. Razavi, "40-Gb/s Amplifier and ESD Protection Circuit in 0.18-μm CMOS Technology," IEEE J. Solid-State Circuits, vol. 39, no. 12, pp. 2389-2396, Dec 2004.