In-situ formation of a copper suicide cap for TDDB and electromigration improvement

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 128-130

  Chattopadhyay, K ^a   Van Schravendijk, B ^a   Mountsier, T W ^a   Alers, G B ^a   Hornbeck, M ^a   Wu, H J ^a   Shaviv, R ^a   Harm, G ^a   Vitkavage, D ^a   Apen, E ^a   Yu, Y ^a   Havemann, R ^a  

^a Novellus Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER SUICIDE CAP; COPPER-DIELECTRIC INTERFACE; DIELECTRIC LAYERS;

DIELECTRIC FILMS; ELECTRIC BREAKDOWN; ELECTROMIGRATION; OPTIMIZATION; RELIABILITY THEORY;

ELECTRIC EQUIPMENT PROTECTION;

EID: 34250736315     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251203     Document Type: Conference Paper

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