Growth mechanism of β-SiC nanowires in SiC reticulated porous ceramics

Ceramics International

Volumn 33, Issue 6, 2007, Pages 901-904

  Yao, Xiumin ^a   Tan, Shouhong ^a   Huang, Zhengren ^a   Dong, Shaoming ^a   Jiang, Dongliang ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

D. SiC; Growth mechanism; Nanowires; Precursor

Indexed keywords

CERAMIC MATERIALS; ENERGY DISPERSIVE SPECTROSCOPY; GROWTH RATE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY; SILICON CARBIDE; STRUTS;

FIELD EMISSION SCANNING ELECTRON MICROSCOPY (FESEM); POLYCARBOSILANE (PCS); SELECTED AREA ELECTRON DIFFRACTION (SAED);

NANOWIRES;

EID: 34250697033     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2006.01.016     Document Type: Article

References (16)

1. Wong E.W., Sheehan P.E., and Lieber C.M. Nanobeam mechanics: elasticity, strength, and toughness of nanorods and nanotubes. Science 277 26 (1997) 1971-1975
2. Zhou X.T., Lai H.L., Peng H.Y., Frederick C.K., et al. Thin β-SiC nanorods and their field emission properties. Chem. Phys. Lett. 318 1-3 (2000) 58-62
3. Han W.Q., Fan S.S., Li Q., et al. Continuous synthesis and characterization of silicon carbide nanorods. Chem. Phys. Lett. 265 3-5 (1997) 374-378
4. Krishinarao R.V., Godokhindi M.M., Mukunda P.G.I., and Chakraborty M. Direct pyrolysis of raw rice husks for maximization of silicon carbide whisker formation. J. Am. Ceram. Soc. 74 (1991) 2869-2873
5. Addamiano A. Preparation and properties of 2H SiC crystals. J. Cryst. Growth. 58 (1982) 617-622
6. Setaka N., and Ajiri K. Influence of vapor-phase composition on morphology of SiC single-crystals. J. Am. Ceram. Soc. 55 (1972) 540-546
7. Dai H., Wang E.W., Lu Y.Z., Fan S.S., and Lieber C.M. Synthesis and characterization of carbide nanorods. Nature 375 (1995) 769-772
8. Tang C.C., fan S.S., Dang H.Y., et al. Growth of SiC nanorods prepared by carbon nanotubes-confined reaction. J. Cryst. Growth. 210 (2000) 595-599
9. Han W.Q., Fan S.S., Li Q.Q., Gu B.L., and Yu D.P. Continuous synthesis and characterization of silicon carbide nanorods. Chem. Phys. Lett. 265 (1997) 374-378
10. 2 wrapping layers. J. Mater. Res. 13 (1998) 2533-2538
11. Zhou X.T., Wang N., Frederick, and Au C.K. Growth and emission properties of β-SiC nanorods. Mater. Sci. Eng. A 286 (2000) 119-124
12. Yang W., Araki H., kohyama A., Hu Q., Suzuki H., and Noda T. Growing SiC nanowires on Tyranno-SA SiC fibers. J. Am. Ceram. Soc. 87 (2004) 733-735
13. Otoshi S., and Tange Y. Growth rate and morphology of silicon carbide whiskers from polycarbosilane. J. Cryst. Growth. 200 (1999) 467-471
14. Otoishi S., and Tange Y. Preparation of SiC whiskers from polycarbosilane. J. Ceram. Soc. Jpn. 104 (1996) 1107-1112
15. Zhu S.M., Xi H.A., Li Q., and Wang R.D. In situ growth of β-SiC nanowires in porous SiC ceramics. J. Am. Ceram. Soc. 88 (2005) 2619-2621
16. Yang W., Araki H., Hu Q., Ishikawa n., Suzuki H., and Noda T. In situ growth of SiC nanowires on RS-SiC substrate. J. Cryst. Growth. 264 (2004) 278-283