Growth and emission properties of β-SiC nanorods

Materials Science and Engineering: A

Volumn 286, Issue 1, 2000, Pages 119-124

  Zhou, X T ^a   Wang, N ^a   Au, Frederick C K ^a   Lai, H L ^a   Peng, H Y ^a   Bello, I ^a   Lee, C S ^a   Lee, S T ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Electron field emission; Nanorods; Silicon carbide

Indexed keywords

CATALYSIS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; IMPURITIES; SILICON CARBIDE; SUBSTRATES;

HYDROSILICON RADICALS; NANORODS;

NANOSTRUCTURED MATERIALS;

EID: 0033726326     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5093(00)00654-7     Document Type: Article

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