Phonon-energy-coupling enhancement: Dramatic improvement of the reliability of silicon MOS transistors

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 739-740

  Chen, Zhi ^a   Guo, Jun ^a  

^a UNIVERSITY OF KENTUCKY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLING ENHANCEMENT; ENHANCED ENERGY COUPLING; GATE OXIDE; PHONON-ENERGY; VIBRATIONAL MODES;

DEUTERIUM; HOT ELECTRONS; RELIABILITY ANALYSIS; SILICA; SILICON; TRANSISTORS;

MOS DEVICES;

EID: 34250696480     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251351     Document Type: Conference Paper

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