Growth and characterization of ferromagnetic MnAs films on different semiconductor substrates

Journal of Magnetism and Magnetic Materials

Volumn 316, Issue 2 SPEC. ISS., 2007, Pages 221-224

  Bolzan, M ^a   Bergenti, I ^b   Rossetto, G ^a   Zanella, P ^a   Dediu, V ^b   Natali, M ^a  

^a CNR   (Italy)

^b CNR   (Italy)

Author keywords

Epitaxy; Ferromagnetism; MOVPE; Spintronics; Thin film

Indexed keywords

ATOMIC FORCE MICROSCOPY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; FILM GROWTH; HYSTERESIS LOOPS; MAGNETOELECTRONICS; OPTICAL KERR EFFECT; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION;

MAGNETO-OPTIC KERR EFFECT (MOKE); SILICON SUBSTRATES; SQUARENESS;

THIN FILMS;

EID: 34250374089     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2007.02.086     Document Type: Article

References (10)

1. Ono K., Uragami T., Miziguchi M., Fujioka H., Oshima M., Tanaka M., and Akinaga H. J. Cryst. Growth 209 (2000) 556
2. Tanaka M. Physica E 2 (1998) 372
3. Das A.K., et al. Phys. Rev. Lett. 91 (2003) 87203
4. Ney A., Hesjedal T., Däweritz L., Koch R., and Ploog K.H. J. Magn. Magn. Mater. 288 (2005) 173
5. Lane P.A., Cockayne B., Wright P.J., Oliver P.E., Tisley M.E.G., Smith N.A., and Harris I.R. J. Cryst. Growth 143 (1994) 237
6. In the case of films on GaAs substrates the Mn:As ratio was determined by considering that the As signal is the sum of film and substrate contributions: %As(tot)=%As(sub)+%As(film). Since %As(sub)=%Ga(sub) we find %As(film)=%As(tot)-%Ga(sub)
7. Tanaka M., Harbison J.P., Park M.C., Park Y.S., Shin T., and Rothberg. G.M. Appl. Phys. Lett. 65 (1994) 1964
8. Lee H.S., Kim T.W., Lee D.U., Jeon H.C., Kang T.W., Lee K.H., and Lee J.Y. Appl. Phys. Lett. 87 (2005) 71907
9. Park Y., and Shin Y.-J. J. Kor. Phys. Soc. 37 (2000) 569
10. Kaganer V.M., Jennichen B., Schippan F., Braun W., Däweritz L., and Ploog. K.H. Phys. Rev. Lett. 85 (2000) 341