A 71.9% power-added-efficiency inverse Class-F LDMOS

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 1542-1545

  Allam Ouyahia, ^a,b   Duperrier, C ^a   Tolant, C ^b   Temcamani, F ^a   Eudeline, Ph ^b  

^a ENSEA   (France)

^b Thales Air Defence TAD ^*  (France)

Author keywords

High efficiency; Inverse Class F; LDMOS; Power amplifiers

Indexed keywords

ELECTRIC IMPEDANCE; GAIN MEASUREMENT; HARMONIC GENERATION; MICROWAVE FREQUENCIES; POWER AMPLIFIERS;

LDMOS TRANSISTOR; LOAD IMPEDANCE; POWER ADDED EFFICIENCY;

MOS CAPACITORS;

EID: 34250373366     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249607     Document Type: Conference Paper

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