A high efficient LDMOS power amplifier based on an inverse Class F architecture

Conference Proceedings- European Microwave Conference

Volumn 3, Issue , 2004, Pages 1181-1184

  Lépine, Fabien ^a   Ådahl, Andreas ^a   Zirath, Herbert ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; ELECTRIC POTENTIAL; FREQUENCIES; POWER AMPLIFIERS; TOPOLOGY; TRANSISTORS;

HARMONICS; LDMOS TRANSISTORS; OUTPUT NETWORK; SWITCHED MODE AMPLIFIERS;

MOS DEVICES;

EID: 18844362657     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. S. Kee, "The Class E/F Family of Harmonic-Tuned Switching Power amplifiers", Ph.D. Dissertation, Department of Electrical Engineering, Caltech - Pasadena, 2002.
2. Francis Huin, "Etudes des formes d'ondes permettant une optimisation des performances de l'amplificateur de puissance", Thèse. Université de Limoges/Facultés es sciences.
3. Akira Inoue, "Analysis of Class-F and Inverse class-F Amplifiers", 2000 IEEE MTT-s Digest.
4. Youngoo Yang, "A New Empirical Large-Signal Model of Si LDMOSFETs for High-Power Amplifier Design", IEEE Transactions on Microwave Theory and Techniques, Vol 49, No09 2001.
5. Stefan Eriksson, "High Efficiency Power Amplifier at S-band", Thesis/Ericsson Microwave Systems AB.
6. A. Ådahl and H. Zirath, "A 1 GHz Class E LDMOS Power Amplifier", European Microwave Week 2003, Munich.
7. Audrey V. Grebennikov, "Circuit Design Technique For High Efficiency Class F Amplifiers", 2002 IEEE MTT-S Digest.
8. A V.Grebennikov, H Jaeger, "Class E with parallel circuit- A new challenge for High Efficiency RF and Microwave Power Amplifiers",2002 IEEE MTT-S Digest.
9. Edelstein W. N., "Current Status of the High Efficiency L-band T/R Module Development for SAR systems", Earth Science Technology Conference, June 24-26, 2003.
10. J. Olsson, "1W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor", IEEE Electron Device Lett, vol. 23,pp.206-8, April 2002.