Measurement-based non-quasi-static large-signal FET model using artificial neural networks

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 469-472

  Xu, Jianjun ^a,b   Gunyan, Daniel ^a,b   Iwamoto, Masaya ^a,b   Cognata, Alex ^b   Root, David E ^a,b  

^a IEEE   (United States)

^b AGILENT TECHNOLOGIES   (United States)

Author keywords

Intermodulation distortion; Microwave FETs; Neural networks; Semiconductor device modeling

Indexed keywords

GATE TERMINAL CHARGES; NON-QUASI-STATIC DYNAMICS; SEMICONDUCTOR DEVICE MODELING;

DRAIN CURRENT; INTERMODULATION DISTORTION; MICROWAVE DEVICES; NEURAL NETWORKS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

FIELD EFFECT TRANSISTORS;

EID: 34250362323     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249594     Document Type: Conference Paper

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