Constitutive relations for nonlinear modeling of Si/SiGe HBTs using an ANN model

International Journal of RF and Microwave Computer-Aided Engineering

Volumn 15, Issue 2, 2005, Pages 203-209

  Taher, Hany Mohamed ^a   Schreurs, Dominique M M P ^a   Nauwelaers, Bark K J C ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Hetro junction bipolar transistor; Large signal; Microwave transistor; Neural network; Nonlinear modeling

Indexed keywords

HARMONIC ANALYSIS; MATHEMATICAL MODELS; MICROWAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NEURAL NETWORKS; NONLINEAR SYSTEMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SIMULATORS;

LARGE SIGNALS; MICROWAVE TRANSISTORS; NONLINEAR MODELING; SILICON-BASED MICROWAVES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 17444418665     PISSN: 10964290     EISSN: None     Source Type: Journal    
DOI: 10.1002/mmce.20069     Document Type: Article

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