AlGaN/GaN HFETs on Si substrates for WiMAX applications

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2006, Pages 710-713

  Therrien, R ^a   Singhal, S ^a   Chaudhari, A ^a   Nagy, W ^a   Marquait, J ^a   Johnson, J W ^a   Hanson, A W ^a   Riddle, J ^a   Rajagopal, P ^a   Preskenis, B ^a   Zhitova, O ^a   Willamson, J ^a   Kizilyalli, I C ^a   Linthicum, K J ^a  

^a NITRONEX CORPORATION   (United States)

Author keywords

AlGaN GaN HFETs; GaN high electron mobility transistors (HEMTs); Linearity; RF power transistors

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRONICS PACKAGING; GAIN MEASUREMENT; ORTHOGONAL FREQUENCY DIVISION MULTIPLEXING; SEMICONDUCTING GALLIUM ARSENIDE; SILICON;

DRAIN EFFICIENCY; POWER SMALL OUTLINE PACKAGE (PSOP2); POWER TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34250328772     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2006.249732     Document Type: Conference Paper

References (6)

1. W. Nagy et al, "150W Gan-on-Si RF Power Transistor," IEEE MTT-S Int. Microwave Symp. Digest, 2005.
2. P. Rajagopal et al., "Large-area, device quality GaN on Si using a novel transition layer scheme", Material Research Society Symposium Proceedings 743(3), 2003
3. Y.F. Wu et al, "Field-plated GaN HEMTs and Amplifiers," CSIC Symposium, Palm Springs, CA, 2005.
4. J.W. Johnson et al., "12W/mm AlGaN-GaN HFETs on Silicon Substrates", IEEE Electron Device Letters, 25(7), pp. 459-461, 2004
5. J.W. Johnson et al., "Material, Process, and Device Development of GaN-based HFETs on Silicon Substrates", Electrochemical Society Proceedings, 2004-06, pp. 405-419 2004
6. R. Therrien et al. IEEE Proceedings of IEDM, pp. 577 - 580, 2005