Maximizing boron activation in solid phase epitaxy - A case of implant choice and RTP processing

Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Volumn , Issue , 2006, Pages 40-43

  Funk, Klaus ^a   Verheyden, Kurt ^a   Krull, Wade ^b   Pages, Xavier ^a   Hapert, Jeroen V ^a   Granneman, Ernst ^a  

^a ASM Europe BV   (Netherlands)

^b Ceradyne Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; BORON; DOPING (ADDITIVES); ION IMPLANTATION; THERMAL EFFECTS;

SOLID PHASE EPITAXIAL REGROWTH (SPER); SOURCE/DRAIN EXTENSIONS; SPIKE TEMPERATURE;

EPITAXIAL GROWTH;

EID: 34250185025     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. R. Lindsay, S. Severi, B. J. Pawlak K. Henson, A. Lauwers, X. Pages, A. Satta, R. Surdeanu, H. Lendzian, and K. Maex, SPER junction optimisation in 45nm CMOS devices IWJT 2004
2. B. J. Pawlak, W. Vandervorst, et al, Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth, APL 86, (12), 2005.
3. S. Severi, K.G. Anil et al, Diffusion-less junctions and super halo profiles for PMOS transistors, IEDM 2004
4. W. Lerch, S. Paul et al, Solid Phase Epitaxy, Activation and Deactivation in USJ,
5. th International Workshop on Junction Technology 2005
6. Nariaki Hamamoto et al., Decaborane implantation with the medium current implanter, ITT 2004
7. T.W. Gibbons, J.F. Sigmon, Solid Phase Regrowth, in J.M. Poate, J.W. Mayer, Laser Annealing of Semiconductors, p325