Challenges of the mask manufacturing approaching physical limits

Journal of Physics and Chemistry of Solids

Volumn 68, Issue 5-6, 2007, Pages 926-930

  Nesladek, Pavel ^a  

^a Advanced Mask Technology Center   (Germany)

Author keywords

A. Metals; A. Polymers; D. Optical properties

Indexed keywords

BIREFRINGENCE; ELECTRON BEAMS; MASKS; POLYMERS; WAVELENGTH;

CRITICAL DIMENSION UNIFORMITY (CDU); RESOLUTION ENHANCEMENT; WAFER MANUFACTURING;

INTEGRATED CIRCUITS;

EID: 34250177253     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.03.043     Document Type: Article

References (5)

1. ITRS -International Technology Roadmap for Semiconductors, 〈http://www.itrs.net/Links/2006Update/FinalToPost/08_Lithography2006Update.pdf〉, 2006.
2. G. Ruhl, R. Dietrich, R. Ludwig, N. Falk, T. Morrison, B. Stoehr, "Optimizing the chromium dry etch process", Semicond. Int. (2001).
3. Dauksher W.J., Mancini D.P., Nordquist K.J., Resnick D.J., Standfast D.L., Convey D., and Wei Y. "Step and flash imprint lithography template characterization from an etch perspective". J. Vac. Sci. Technol. B21 6 (2003)
4. Faure T., Fisch E., Huynh C., and Crawford S. "Chrome Dry Etching for 65 nm node mask manufacturing", Twenty fourth Annual BACUS Symposium on Photomask Technology. Proc. SPIE 5567 (2004) 155
5. Gallatin G.M. "Resist blur and line-edge roughness", Microlithography 2005. Proc. SPIE 5754 (2005) 38