Photoluminescence study of defects in GaN grown by molecular beam epitaxy

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Reshchikov, Michael A ^a   Zhang, Manhong H ^a   Cui, Jie ^a   Visconti, Paolo ^a   Yun, Feng ^a   Morkoç, Hadis ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; CRYSTAL GROWTH; GALLIUM; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUENCHING; TEMPERATURE;

CONFIGURATION COORDINATE; RADIO FREQUENCY PLASMA;

GALLIUM NITRIDE;

EID: 0035558712     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)