High-adhesive back side metallization of ultrathin wafers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 881-885

  Felmetsger, Valery V ^a  

^a Tegal Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESIVES; FIELD EFFECT TRANSISTORS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MAGNETRONS; METALLIZING; MOS DEVICES; ULTRATHIN FILMS;

QUANTITATIVE X-RAY ENERGY DISPERSIVE SPECTROSCOPY; ULTRATHIN WAFERS; WAFER BACK SIDE PROCESSING TECHNOLOGY;

SILICON WAFERS;

EID: 34249898046     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2737441     Document Type: Article

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