Characterization of optical lifetime in silicon-on-insulator wafers by photoluminescence decay method

Materials Research Society Symposium Proceedings

Volumn 681, Issue , 2001, Pages 195-200

  Ibuka, Shigeo ^a   Tajima, Michio ^a   Ogura, Atsushi ^b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; PHOTOEXCITATION; PHOTOLUMINESCENCE; SILICON ON INSULATOR TECHNOLOGY; ULTRAVIOLET RADIATION;

DECAY MEASUREMENT; DEFECT STATES; ELECTRON HOLE CONDENSATION;

SILICON WAFERS;

EID: 34249897504     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-681-i9.6     Document Type: Conference Paper

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9. The decay of BS-2 was the fastest data of the three measured points shown in Fig. 3.