-
1
-
-
84886448151
-
-
D. Edlstein, J. Heidenreich, R. Goldblatt, W. Cote, C, Uzoh, N, Lustig, P. Roper, T. McDevitt, W. Motssiff, A. Simon, J. Dukovic, R. Wachnik, H. Rathore, R. Schulz L. Su, S. Luce, and J, Slattery, Full Copper Wiring in a Sub-0.25 μm CMOS ULSI Technology, Technical Digest, IEEE International Electronic Devices Meeting, 773 (1997).
-
D. Edlstein, J. Heidenreich, R. Goldblatt, W. Cote, C, Uzoh, N, Lustig, P. Roper, T. McDevitt, W. Motssiff, A. Simon, J. Dukovic, R. Wachnik, H. Rathore, R. Schulz L. Su, S. Luce, and J, Slattery, "Full Copper Wiring in a Sub-0.25 μm CMOS ULSI Technology", Technical Digest, IEEE International Electronic Devices Meeting, 773 (1997).
-
-
-
-
2
-
-
0034452603
-
A 130 nm Generation Logic Technology Featuring 70 nm Transistors, Dual Vt Transistors and 6 Layers of Cu Interconnects
-
S. Tyagi, M. Alavi, R. Bigwood, T, Bramblett, J. Branddenberg, W. Chen, B. Crew, M. Hussein, P, Jacob, C. Kenyon, C. Lo, B. Mcintyre, Z. Ma, P. Moon, P, Nguyen, L. Rumaner, R. Schweinfurth, S. Sivakumar, M, Stettier, S, Thompson, B. Tufts, J. Xu, S. Yang, and M. Bohr, "A 130 nm Generation Logic Technology Featuring 70 nm Transistors, Dual Vt Transistors and 6 Layers of Cu Interconnects ", Technical Digest, IEEE International Electronic Devices Meeting, 567 (2000).
-
(2000)
Technical Digest, IEEE International Electronic Devices Meeting
, vol.567
-
-
Tyagi, S.1
Alavi, M.2
Bigwood, R.3
Bramblett, T.4
Branddenberg, J.5
Chen, W.6
Crew, B.7
Hussein, M.8
Jacob, P.9
Kenyon, C.10
Lo, C.11
McIntyre, B.12
Ma, Z.13
Moon, P.14
Nguyen, P.15
Rumaner, L.16
Schweinfurth, R.17
Sivakumar, S.18
Stettier, M.19
Thompson, S.20
Tufts, B.21
Xu, J.22
Yang, S.23
Bohr, M.24
more..
-
3
-
-
0034452555
-
Optimizing the Electromigration Performance of Copper Interconnections
-
Paul Besser, Amit Marathe, Larry Zhao, Matthew Herrick, Cristiano Cappasso, and Hisao Kawasaki, "Optimizing the Electromigration Performance of Copper Interconnections", Technical Digest, IEEE International Electronic Devices Meeting, 119 (2000).
-
(2000)
Technical Digest, IEEE International Electronic Devices Meeting
, vol.119
-
-
Besser, P.1
Marathe, A.2
Zhao, L.3
Herrick, M.4
Cappasso, C.5
Kawasaki, H.6
-
4
-
-
0028516105
-
-
J. Steigerwald, R. Zirpoli, S, Murarka, D. Price, and R. Gutmnm, J. Electrochem. Soc, 141, 2842 (1994).
-
(1994)
J. Electrochem. Soc
, vol.141
, pp. 2842
-
-
Steigerwald, J.1
Zirpoli, R.2
Murarka, S.3
Price, D.4
Gutmnm, R.5
-
5
-
-
84962869215
-
Complete-Abrasive-Free Process for Copper Damascene Interconnection
-
Seiichi Kondo, Noriyuki Sakuma, Yoshio Homma, Yasushi Goto, Naofumi Ohashi, Hizuru Yamaguchi, and Nobuo Owada, "Complete-Abrasive-Free Process for Copper Damascene Interconnection", Proceeding of International Interconnect Technology Conf., 253-255 (2000).
-
(2000)
Proceeding of International Interconnect Technology Conf
, vol.253-255
-
-
Kondo, S.1
Sakuma, N.2
Homma, Y.3
Goto, Y.4
Ohashi, N.5
Yamaguchi, H.6
Owada, N.7
-
6
-
-
0034296462
-
-
Seiichi Kondo, Noriyuki Sakuma, Yoshio Homma, Yasushi Goto, Naofumi Ohashi, Hizuru Yamaguchi, and Nobuo Owada, J. Electrochem. Soc., 147, 3907 (2000).
-
(2000)
J. Electrochem. Soc
, vol.147
, pp. 3907
-
-
Kondo, S.1
Sakuma, N.2
Homma, Y.3
Goto, Y.4
Ohashi, N.5
Yamaguchi, H.6
Owada, N.7
-
7
-
-
84962861311
-
A 7 Level Metallization with Cu Damascene Process Using Abrasive Free Polishing
-
H. Yamaguchi, N. Ohashi, T. Imai, K. Torii, J. Noguchi, T. Fujiwara, T. Sato, N. Owada, Y. Homma, S. Kondo and K. Hinode, "A 7 Level Metallization with Cu Damascene Process Using Abrasive Free Polishing" Proceeding of International Interconnect Technology Conf., 264-266 (2000).
-
(2000)
Proceeding of International Interconnect Technology Conf
, vol.264-266
-
-
Yamaguchi, H.1
Ohashi, N.2
Imai, T.3
Torii, K.4
Noguchi, J.5
Fujiwara, T.6
Sato, T.7
Owada, N.8
Homma, Y.9
Kondo, S.10
Hinode, K.11
-
8
-
-
0344008697
-
Improved Cu CMP process for 0.13 μm node multilevel metallization
-
N. Ohashi, Y. Yamada, K. Konishi, H. Maruyama, T. Oshima, H. Yamaguchi, "Improved Cu CMP process for 0.13 μm node multilevel metallization", Proceeding of International Interconnect Technology Conf., 140-142 (2001).
-
(2001)
Proceeding of International Interconnect Technology Conf
, vol.140-142
-
-
Ohashi, N.1
Yamada, Y.2
Konishi, K.3
Maruyama, H.4
Oshima, T.5
Yamaguchi, H.6
-
9
-
-
85008481444
-
-
Y. Kamigata, Y. Kurata, K. Masuda, J. Amanokura, M. Yoshida and M. Hanazono, Proceeding of Material Research Society Meeting, 671, M 1.3.1 (2000).
-
Y. Kamigata, Y. Kurata, K. Masuda, J. Amanokura, M. Yoshida and M. Hanazono, Proceeding of Material Research Society Meeting, 671, M 1.3.1 (2000).
-
-
-
-
10
-
-
0026260129
-
-
K. Kaufman, D. Thompson, R. Broadie, M. Jaso, W. Guthrie, D. Pearson and M. Small, J. Electrochem. Soc., 138, 3460 (1991).
-
(1991)
J. Electrochem. Soc
, vol.138
, pp. 3460
-
-
Kaufman, K.1
Thompson, D.2
Broadie, R.3
Jaso, M.4
Guthrie, W.5
Pearson, D.6
Small, M.7
|