Molecular dynamics simulation about porous thin-film growth in secondary deposition

Applied Surface Science

Volumn 253, Issue 18, 2007, Pages 7471-7477

  Chen, Huawei ^a,b   Tieu, A Kiet ^b   Liu, Qiang ^a   Hagiwara, Ichiro ^c   Lu, Cheng ^b  

^a BEIHANG UNIVERSITY   (China)

^b UNIVERSITY OF WOLLONGONG   (Australia)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Chemical vapor deposition processes; Computer simulation; Epitaxial growth; Growth models; Molecular dynamics; Secondary deposition; Thin film

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; FILM GROWTH; NANOSTRUCTURED MATERIALS; POROUS MATERIALS; THERMAL EFFECTS; THIN FILMS;

CLUSTER DENSITY; CLUSTER DEPOSITION; GAS FLUIDS;

MOLECULAR DYNAMICS;

EID: 34249875424     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.03.049     Document Type: Article

References (7)

1. Yeadon M., Ghaly M., Yang J.C., Averback R.S., and Gibson J.M. Appl. Phys. Lett. 73 (1998) 3208
2. Lei H.L., Hou Q., and Hou M. J. Phys.: Condens. Matter 12 (2000) 8387
3. Chen H., Hagiwara I., Zhang D., and Huang T. J. Crystal Growth 276 (2005) 281
4. Chen H., Hagiwara I., Huang T., and Zhang D. Synth. Met. 155 (2005) 652-656
5. Hwang N. J. Crystal Growth 198/199 (1999) 85
6. Adams J.B., Wang Z., and Li Y. Thin solid films 365 (2000) 201-210
7. Chen H., Nakata S., Ishihara M., Yamada S., and Hagiwara I. Evaluation of parallel processing of eigenvalue analysis with hybrid description. Trans. JSCES 7 (2005) 23-28