Influence of surface electrode on luminescent properties of nanocrystalline silicon electroluminescent device

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 2, 2007, Pages 653-657

  Sato, Keisuke ^a   Hirakuri, Kenji ^a  

^a TOKYO DENKI UNIVERSITY   (Japan)

Author keywords

Electroluminescence; Electroluminescent device; Nanocrystalline silicon; Optical property; Sputtering technique; Surface electrode

Indexed keywords

(100) SILICON; ELECTROLUMINESCENT DEVICE; INDIUM TIN OXIDE (ITO); ITO ELECTRODES; LUMI NESCENT PROPERTIES; LUMINESCENCE PROPERTIES; NANO CRYSTALLINE; SURFACE ELECTRODES;

ELECTROLUMINESCENCE; ELECTROLYSIS; FILM THICKNESS; GOLD; INDIUM; LIGHT EMISSION; LUMINESCENCE; MAGNETIC FILMS; METALLIZING; MOLECULAR BEAM EPITAXY; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; OXIDE FILMS; PHOTOLITHOGRAPHY; SILICON; TIN; TITANIUM COMPOUNDS;

NANOCRYSTALLINE SILICON;

GLASS; GOLD; INDIUM; NANOPARTICLE; SILICON; TIN DERIVATIVE; TIN DIOXIDE; UNCLASSIFIED DRUG;

ARTICLE; CHEMISTRY; COLOR; COMPARATIVE STUDY; CRYSTALLIZATION; ELECTROCHEMISTRY; ELECTRODE; IMPEDANCE; LUMINESCENCE; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOCHEMISTRY; SURFACE PROPERTY; TEMPERATURE; ULTRAVIOLET SPECTROPHOTOMETRY;

COLOR; CRYSTALLIZATION; ELECTRIC IMPEDANCE; ELECTROCHEMISTRY; ELECTRODES; GLASS; GOLD; INDIUM; LUMINESCENCE; LUMINESCENT MEASUREMENTS; NANOPARTICLES; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOCHEMISTRY; SILICON; SPECTROPHOTOMETRY, ULTRAVIOLET; SURFACE PROPERTIES; TEMPERATURE; TIN COMPOUNDS;

EID: 34249854863     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2007.130     Document Type: Article

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