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Volumn 19, Issue 10, 2007, Pages 2694-2701

Structure and electrical properties of unsubstituted oligothiophenes end-capped at the β-position

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FIELD EFFECT TRANSISTORS; GRAIN SIZE AND SHAPE; MOLECULAR STRUCTURE; OLIGOMERS; THIN FILMS; X RAY DIFFRACTION;

EID: 34249731560     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm0701658     Document Type: Article
Times cited : (28)

References (40)
  • 28
    • 34249678417 scopus 로고    scopus 로고
    • Bruker, SMART (Version 5.625) and SAINTPLUS Version 6.22, Bruker Axs Inc, Madison, WI, 2000
    • Bruker, SMART (Version 5.625) and SAINTPLUS (Version 6.22); Bruker Axs Inc.: Madison, WI, 2000.
  • 29
    • 34249706805 scopus 로고    scopus 로고
    • Sheldrick, G. M. SHELXTL, Version 6.12; Bruker AXS: Madison, WI, 2000
    • Sheldrick, G. M. SHELXTL, Version 6.12; Bruker AXS: Madison, WI, 2000.
  • 30
    • 0004283942 scopus 로고    scopus 로고
    • University of Göttingen: Göttingen, Germany
    • Sheldrick, G. M. SADABS; University of Göttingen: Göttingen, Germany, 1996.
    • (1996) SADABS
    • Sheldrick, G.M.1
  • 33
    • 34249667705 scopus 로고    scopus 로고
    • To ensure our calculation procedure, we also calculated the band structure of the HOMO of the α-6T high-temperature polymorph and compared the results with those of Haddon et al.34 The shape of the HOMO band was similar to their results while the energy level and the bandwidth were different. The qualitative discrepancies may be due to the difference in the calculation program and parameters
    • 34 The shape of the HOMO band was similar to their results while the energy level and the bandwidth were different. The qualitative discrepancies may be due to the difference in the calculation program and parameters.


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