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Applied Physics Letters

Volumn 90, Issue 21, 2007, Pages

In situ treatment of a scanning gate microscopy tip

(6) Gildemeister, A E a Ihn, T a Sigrist, M a Ensslin, K a Driscoll, D C b Gossard, A C b

a ETH ZURICH (Switzerland)

b University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IN SITU HIGH-FIELD TREATMENT; TIP INDUCED POTENTIAL;

ELECTRON TRANSPORT PROPERTIES; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS;

ATOMIC FORCE MICROSCOPY;

EID: 34249678679 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2742314 Document Type: Article

Times cited : (6)

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