Annealing effect on the properties of La0.7Sr0.3MnO3 thin film grown on Si substrates by DC sputtering

Physica B: Condensed Matter

Volumn 396, Issue 1-2, 2007, Pages 75-80

  Sahu, D R ^a,b   Mishra, D K ^b   Huang, Jow Lay ^a   Roul, B K ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Institute of Materials Science   (India)

Author keywords

Colossal magnetoresistance; LSMO; Magnetic properties and annealing; Sputtering

Indexed keywords

ANNEALING; COLOSSAL MAGNETORESISTANCE; FILM GROWTH; GRAIN BOUNDARIES; LANTHANUM COMPOUNDS; MAGNETIC PROPERTIES; METAL INSULATOR TRANSITION; SILICON; SPUTTERING; X RAY DIFFRACTION;

ANNEALING TEMPERATURE; CATIONIC VACANCIES; HOLE DOPING;

THIN FILMS;

EID: 34249292958     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.03.016     Document Type: Article

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