La0.67Ca0.33MnO3 thin films on Si (1 0 0) by DC magnetron sputtering technique using nanosized powder compacted target

Materials Research Bulletin

Volumn 42, Issue 6, 2007, Pages 1119-1127

  Sahu, D R ^a,b   Mishra, D K ^b   Hung, S H ^a   Pramanik, P ^c   Roul, B K ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Institute of Materials Science   (India)

^c INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

A. Oxides; A. Thin films; B. Sputtering; C. X ray diffraction; D. Electrical properties

Indexed keywords

COLOSSAL MAGNETORESISTANCE; ELECTRIC PROPERTIES; LANTHANUM COMPOUNDS; MAGNETRON SPUTTERING; SINTERING; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION;

FERROMAGNETIC TRANSITIONS; FILMS DEPOSITION PARAMETERS; SINTERING TEMPERATURE; STOCHIOMETRY COMPOSITES;

THIN FILMS;

EID: 34047125236     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2006.09.004     Document Type: Article

References (30)

1. Sahu D.R., Roul B.K., Pramanik P., and Huang J.L. Physica B 369 (2005) 209
2. Jin S., Tiefel T.H., McCormack M., Fastnacht R.A., Ramesh R., and Chen L.H. Science 264 (1993) 413
3. Rao C.N., Cheetham A.K., and Mahesh R. Chem. Mater. 8 (1996) 2421
4. Tiwari A., and Rajeev K.P. Phys. Rev. B 60 (1999) 10591
5. Pradhan A.K., Sahu D.R., Roul B.K., and Feng Y. Appl. Phys. Lett. 81 (2002) 3597
6. Paranjape M., and Raychaudhuri A.K. Solid State Commun. 123 (2002) 521
7. Haghiri-Gosnet A.M., and Renard J.P. J. Phys. D 36 (2003) R127
8. Goyal A., Rajeswari M., Shreekala R., Lofland S.E., Bhagat S.M., Boettcher T., Kwon C., Ramesh R., and Venkatesan T. Appl. Phys. Lett. 71 (1997) 2535
9. Shreekala R., Rajeswari M., Pai S.P., Lofland S.E., Smolyaninova V., Ghosh K., Oagle S.B., Bhagat S.M., Downes M.J., Greene R.L., Ramesh R., and Venkatesan T. Appl. Phys. Lett. 74 (1999) 2857
10. Rajeswari M., Chen C.H., Goyal A., Kwon C., Robson M.C., Ramesh R., Venkatesan T., and Lakeou S. Appl. Phys. Lett. 68 (1996) 3555
11. Lai C.H., Hsu C.F., Chin Y.C., and Chiang C. J. Vac. Sci. Technol. A 19 4 (2001) 1186
12. Liu S.M., Zhu X.B., Yang J., Song W.H., Dai J.M., and Sun Y.P. Ceram. Int. 32 (2006) 157
13. Sahasrabudhe M.S., Adhi K.P., Harchirkar S.S., Deshmukh A.V., Patil S.I., and Kumar R. Nucl. Instrum. Methods Phys. Res. B 244 (2006) 333
14. Ahn G.Y., Paerk S.I., Shim I.B., Cho Y.S., and Kim C.S. Phys. Status Solidi B 241 (2004) 1561
15. Lee J.C., You D.G., Le S.Y., Sung M.C., Song H.S., Jinkim S., and Kim C.S. J. Appl. Phys. 91 (2002) 221
16. Vlakhov E.S., Donchev T.I., Spasov A.Y., Dorr K., Nenkov K.A., Handstein A., Pignard S., and Vincent H. Vaccum 69 (2003) 249
17. Vlakhov E.S., Chakalov R.A., Chakalova R.I., Nenkov K.A., Dorr K., Handstein A., and Muller K.H. J. Appl. Phys. 83 (1998) 2152
18. Choi K.K., and Yamazaki Y. J. Appl. Phys. 38 1 (1999) 56
19. Dorr K., Muller K.H., Vlakhov E.S., Chakaiov R.A., Chakalova R.I., Nenkov K.A., Handstein A., Hoizapfel B., and Schillz L. J. Appl. Phys. 83 (1998) 7079
20. Gillman E.S., Li M., and Dahmen K.H. J. Appl. Phys. 84 (1998) 6217
21. Kung P.J., Fenner D.B., Potrepka D.M., and Budnick J.I. Appl. Phys. Lett. 69 (1996) 427
22. Zhang W., Wang X., and Boyd I.W. Appl. Surf. Sci. 138 (1998) 563
23. Park S., Lee K.R., and Song J.S. J. Korean Ceram. Soc. 38 (2001) 461
24. Lee K.R., Chung Y.J., Lee J.H., Song J.S., and Park S. Thin Solid Films 426 (2003) 205
25. Mahendiran R., Tiwary S.K., Raychaudhuri A.K., Ramkrishnan T.V., Mahesh R., Rangavittal N., and Rao C.N.R. Phys. Rev. B 53 (1996) 3348
26. Prellier W., Rajeswari M., Venkatesan T., and Greene R.L. Appl. Phys. Lett. 75 (1999) 1446
27. Pradhan A.K., Sahu D.R., Roul B.K., and Feng Y. J. Appl. Phys. 96 (2004) 1170
28. Salavato M., Vecchione A., De Santis A., Bobba F., and Cucolo A.M. J. Appl. Phys. 97 (2005) 103712
29. Li K., Qi Z., Li X., Zhu J., and Zhang Y. Thin Solid Films 304 (1997) 386
30. Prellier W., Rajeswari M., Venkatesan T., and Greene R.L. Appl. Phys. Lett. 75 (1999) 1446