Examining dislocations in SiC epitaxy by light emission from simple diode structures

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 387-390

  Liu, Kendrick X ^a   Stahlbush, Robert E ^a   Hobart, Karl D ^a   Sumakeris, Joseph J ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

Degradation; Dislocations; PiN diodes; Stacking faults; V

Indexed keywords

ALUMINUM; DIODES; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; EPITAXIAL LAYERS; LIGHT EMISSION; METALLIC FILMS; MICROFABRICATION;

BASAL PLANE DISLOCATIONS (BPDS); ELECTROLUMINESCENT IMAGING; VOLTAGE CHARACTERISTICS;

SILICON CARBIDE;

EID: 34249085012     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.387     Document Type: Conference Paper

References (4)

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