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Microchimica Acta

Volumn 139, Issue 1-4, 2002, Pages 11-16

Cathodoluminescence depth profiling in SiO2:Ge layers

(4) Barfels, Torsten a Schmidt, Bernd b von Czarnowski, Andreas a Fitting, Hans Joachim a

a UNIVERSITY OF ROSTOCK (Germany)

b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

Author keywords

Cathodoluminescence; Depth profiling; Ge implantation; Thermal annealing

Indexed keywords

EID: 34249063676 PISSN: 00263672 EISSN: 14365073 Source Type: Journal
DOI: 10.1007/s006040200033 Document Type: Article

Times cited : (3)

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