Two-dimensional holes in GaAs Higfets: Fabrication methods and transport measurements

International Journal of Modern Physics B

Volumn 21, Issue 8-9, 2007, Pages 1219-1227

  Huang, Jian ^a   Novikov, D S ^a   Tsui, D C ^a   Pfeiffer, L N ^b   West, K W ^b  

^a Princeton University   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

Field effect transistor; Metal insulator transition; Strongly correlated electrons; Two dimensional transport

Indexed keywords

EID: 34248677338     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0217979207042665     Document Type: Conference Paper

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