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Volumn , Issue , 2006, Pages 185-187

Silicon evanescent lasers and amplifiers

Author keywords

[No Author keywords available]

Indexed keywords

PUMPING (LASER); QUANTUM WELL LASERS;

EID: 34248667209     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/group4.2006.1708207     Document Type: Conference Paper
Times cited : (6)

References (8)
  • 1
    • 14344257465 scopus 로고    scopus 로고
    • A continuous-wave Raman silicon laser
    • H. Rong et al., "A continuous-wave Raman silicon laser," Nature 433, 725, (2005).
    • (2005) Nature , vol.433 , pp. 725
    • Rong, H.1
  • 2
    • 9144245707 scopus 로고    scopus 로고
    • Demonstration of a silicon Raman laser
    • O. Boyraz et al., "Demonstration of a silicon Raman laser," Opt. Express 12, 5269, (2004).
    • (2004) Opt. Express , vol.12 , pp. 5269
    • Boyraz, O.1
  • 3
    • 33646716022 scopus 로고    scopus 로고
    • Silicon based laser, amplifier, and wavelength converter for optoelectronic integration
    • H. Rong et al., "Silicon based laser, amplifier, and wavelength converter for optoelectronic integration," Proc. SPIE 6125, 612505, (2006)
    • (2006) Proc. SPIE , vol.6125 , pp. 612505
    • Rong, H.1
  • 4
    • 27744552032 scopus 로고    scopus 로고
    • Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells
    • H. Park et al., "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Express 13, 9460 (2005).
    • (2005) Opt. Express , vol.13 , pp. 9460
    • Park, H.1
  • 5
    • 0036248656 scopus 로고    scopus 로고
    • Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding
    • D. Pasquariello et al., "Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding," IEEE J. Sel. Topics Quantum Electron. 8, 118, (2002).
    • (2002) IEEE J. Sel. Topics Quantum Electron. , vol.8 , pp. 118
    • Pasquariello, D.1
  • 6
    • 1242309295 scopus 로고    scopus 로고
    • Low temperature InP/Si wafer bonding
    • Q. Tong et al., "Low temperature InP/Si wafer bonding," Appl. Phys. Lett. 84, 732, (2004).
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 732
    • Tong, Q.1
  • 7
    • 0015667898 scopus 로고
    • CW degradation at 300K of GaAs double heterostructure junction lasers - II: Electronic gain
    • B. W. Hakki et al., "CW degradation at 300K of GaAs double heterostructure junction lasers - II: Electronic gain," J. Appl. Phys., 44, 4112, (1973)
    • (1973) J. Appl. Phys. , vol.44 , pp. 4112
    • Hakki, B.W.1
  • 8
    • 0026938146 scopus 로고
    • Long wavelength high-speed semiconductor lasers with carrier transport effects
    • M. Ishikawa, et. al., "Long wavelength high-speed semiconductor lasers with carrier transport effects," IEEE J. Quantum Electron. 28, 2230, (1992).
    • (1992) IEEE J. Quantum Electron. , vol.28 , pp. 2230
    • Ishikawa, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.