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Volumn 6468, Issue , 2007, Pages

Investigation of optical far-field stability in long-wavelength VCSELs - Thermal and carrier-induced effects

Author keywords

Electro opto thermal laser simulation; Far field; Free carrier absorption (FCA); Gain guiding; Refractive index; Technology computer aided design (TCAD); Thermal lensing; Vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTROOPTICAL DEVICES; HELMHOLTZ EQUATION; LASER APPLICATIONS; OPTICAL SENSORS;

EID: 34248583283     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.699842     Document Type: Conference Paper
Times cited : (8)

References (18)
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  • 2
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  • 3
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    • Analysis of the Static and Dynamic Characteristics of 1310 nm Vertical-Cavity Surface-Emitting Lasers
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  • 6
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    • A Microscopic Model for the Static and Dynamic Lineshape of Semiconductor Lasers
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    • Adar, R.1
  • 12
    • 0019590743 scopus 로고
    • Spectral Dependence of the Change in Refractive Index due to Carrier Injection in GaAs Lasers
    • C. H. Henry, R. A. Logan, and K. A. Bertness, "Spectral Dependence of the Change in Refractive Index due to Carrier Injection in GaAs Lasers", IJ. Appl. Phys, Vol. 52, No. 7, pp. 4457-4461, 1981.
    • (1981) IJ. Appl. Phys , vol.52 , Issue.7 , pp. 4457-4461
    • Henry, C.H.1    Logan, R.A.2    Bertness, K.A.3
  • 13
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    • Carrier-Induced Change in Refractive Index of InP, GaAs, and InGaAsP
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.