Photoluminescence of individual doped GaAsAlGaAs nanofabricated quantum dots

Applied Physics Letters

Volumn 90, Issue 18, 2007, Pages

  Kalliakos, Sokratis ^a   García, Ćsar Pascual ^a   Pellegrini, Vittorio ^a   Zamfirescu, Marian ^b   Cavigli, Lucia ^b   Gurioli, Massimo ^b   Vinattieri, Anna ^b   Pinczuk, Aron ^c,d   Dennis, Brian S ^d   Pfeiffer, Loren N ^d   West, Ken W ^d  

^a SCUOLA NORMALE SUPERIORE   (Italy)

^b UNIVERSITY OF FLORENCE   (Italy)

^c Columbia University ^*  (United States)

^d LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PEAK ENERGIES; SPECTRAL EMISSION; UNIFORM LUMINESCENCE LINES;

ELECTRON BEAM LITHOGRAPHY; LIGHT EMISSION; LUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34247897270     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2734397     Document Type: Article

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