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Volumn 101, Issue 8, 2007, Pages

Mask-edge defects in hybrid orientation direct-Si-bonded substrates recrystallized by solid phase epitaxy after patterned amorphization

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; EPITAXIAL GROWTH; RECRYSTALLIZATION (METALLURGY); SILICON WAFERS; SUBSTRATES;

MASK EDGE DEFECTS; PATTERNED AMORPHIZATION; SOLID PHASE EPITAXY; TRIANGULAR BANDS;

AMORPHOUS SILICON;

EID: 34247853364 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2717543 Document Type: Article

Times cited : (10)

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