Photoluminescence study on defects in multicrystalline silicon

Semiconductors

Volumn 41, Issue 4, 2007, Pages 436-439

  Arguirov, T ^a,b   Seifer, W ^a,b   Jia, G ^b   Kittler, M ^a,b  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34247605998     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782607040148     Document Type: Article

References (11)

1. I. Tarasov, S. Ostanko, C. Haessler, and E. U. Reisner, Mater. Sci. Eng. B 71, 51 (2000).
2. Y. Koshka, S. Ostapenko, I. Tarasov, et al., Appl. Phys. Lett. 74, 1555 (1999).
3. Tz. Arguirov, W. Seifert, M. Kittler, and J. Reif, Mater. Sci. Eng. B 102, 251 (2003).
4. V. Higgs, F. Chin, and X. Wang, Solid State Phenom. 63-64, 235 (1998).
5. V. Higgs, F. Chin, X. Wang, et al., J. Phys.: Condens. Matter 12, 10105 (2000).
6. H. Schlangenotto, H. Maeder, and W. Gerlach, Phys. Status Solidi A 21, 357 (1974).
7. H. J. Leamy, L. C. Kimerling, and S. D. Ferris, in Scanning Electron Microscopy (1976), Part 4, p. 529 [in Proceedings of Workshop on Microelectronic Device Fabrication and Quality Control with the SEM (Chicago, IL, 1976), p. 60616].
8. V. V. Kveder, E. A. Steinman, and H. G. Grimmeiss, Solid State Phenom. 47-48, 419 (1996).
9. V. V. Kveder, E. A. Steinman, S. A. Shevchenko, and H. G. Grimmeiss, Phys. Rev. B 51, 10520 (1995).
10. M. A. Vouk and E. C. Lightowlers, J. Phys. C: Solid State Phys. 10, 3689 (1977).
11. I. De Wolf, Semicond. Sci. Technol. 11, 139 (1996).