Near-field lithography as prototype nano-fabrication tool

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 705-710

  Inao, Yasuhisa ^a   Nakasato, Shinji ^a   Kuroda, Ryo ^a   Ohtsu, Motoichi ^b  

^a CANON INC   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Clean environment; Lithography; Nano optical elements; Near field; Step and repeat exposure

Indexed keywords

LIGHT SOURCES; NANOTECHNOLOGY; OPTICAL DEVICES; SILICON WAFERS;

CLEAN ENVIRONMENT; NANO OPTICAL ELEMENTS; NEAR FIELD LITHOGRAPHY; REPEAT EXPOSURE;

LITHOGRAPHY;

EID: 34247600630     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.043     Document Type: Article

References (4)

1. R. Kuroda et al, Canon Inc., USP6171730, 1997 (prior Japanese Patent filing).
2. Ito T., et al. J. Photopolym. Sci. Technol. 18 (2005) 435-441
3. Ito T., et al. Appl. Phys. Lett 89 (2006) 033113
4. Alkaisi M.M., et al. Appl. Phys. Lett 75 (1999) 3560-3562