A new isolation technique for reverse blocking IGBT with ion implantation and laser annealing to tapered chip edge sidewalls

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Shimoyama, Kazuo ^a   Takei, Manabu ^a   Souma, Yasuhisa ^a   Yajima, Ayako ^a   Kajiwara, Satomi ^a   Nakazawa, Haruo ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN; ION IMPLANTATION; LASER BEAM EFFECTS; MICROPROCESSOR CHIPS;

LASER ANNEALING; REVERSE BLOCKING CAPABILITY; VOLTAGE RB-IGBT;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 34247549363     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. Takei, Y. Harada and K. Ueno, "600V-IGBT with Reverse Blocking Capability", ISPSD 2001 Proceedings, pp.413.
2. M. Takei, "The Reverse Blocking IGBT for Matrix Converter with Ultra Thin Wafer Technology", ISPSD 2003 proceedings, pp. 156.
3. T. Naito, M. Takei, M. Nemoto, T. Hayashi and K. Ueno, "1200V Reverse Blocking IGBT with Low Loss for Matrix Converter", ISPSD 2004 proceedings, pp. 125.
4. N. Tokuda, M. Kaneda and T. Minato, "An ultra-small isolation area for 600V class Reverse Blocking IGBT with Deep Trench Isolation process (TI-RB-IGBT)", ISPSD 2004 proceedings, pp. 129.