1200V reverse blocking IGBT with low loss for matrix converter

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 125-128

  Naito, T ^a   Takei, M ^a   Nemoto, M ^a   Hayashi, T ^a   Ueno, K ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DIFFUSION; DIODES; ELECTRIC NETWORK ANALYSIS; INSULATED GATE BIPOLAR TRANSISTORS; LOW TEMPERATURE EFFECTS; SILICON WAFERS; SWITCHES;

BI-DIRECTION SWITCHES; MATRIX CONVERTERS; REVERSE BLOCKING; THIN WAFER TECHNOLOGY;

ELECTRIC CONVERTERS;

EID: 4944236891     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/wct.2004.239842     Document Type: Conference Paper

References (3)

1. Mathieu Roy, Laurent Gonthier, and Christine Anceau, "The MBS (Mos Bidirectional Switch), a new MOS switch with reverse blocking voltage" EPE99-Lausanne, 1999
2. M.Takei, Y.Harada, and K.Ueno, "600V-IGBT with Reverse Blocking Capability", ISPSD2001 Proceedings, pp.413, 2001
3. M.Takei, T.Naito, and K.Ueno, "The Reverse Blocking IGBT for Matrix Converter With Ultra-Thin Wafer Technology", ISPSD2003 Proceedings, pp.156, 2003