High density MOSBD (UMOS with built-in Trench Schottky Barrier Diode) for synchronous Buck converters

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Ono, Syotaro ^a   Yamaguchi, Yoshihiro ^a   Matsuda, Noboru ^a   Takano, Akio ^a   Akiyama, Miwako ^a   Kawaguchi, Yusuke ^a   Nakagawa, Akio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CONVERSION EFFICIENCY; ELECTRIC POTENTIAL; MICROPROCESSOR CHIPS; MOS DEVICES; POWER CONVERTERS; VOLTAGE CONTROL;

BUCK CONVERTERS; FORWARD VOLTAGE DROP; REVERSE RECOVERY CHARGE (QRR);

SCHOTTKY BARRIER DIODES;

EID: 34247545782     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. M.Darwish, et al "A New Power W-Gated Trench MOSFET (WMOSFET) with High Switching Performance", ISPSD Proceedings, April 2003, pp.24-27
2. L.Ma, et al, "New Trench MOSFET Technology for DC-DC Converter Applications", ISPSD Proceedings, April 2003, pp.354-357
3. D.Calafut, "Trench Power MOSFET Lowside Switch with Optimized Integrated Schottky Diode", ISPSD Proceedings, May 2004, pp.397-400.
4. M.Shiraishi, et al, "Low Loss and Small SiP for DC-DC Converters", ISPSD Proceedings, May 2005, pp.175-178.
5. Yusuke Kawaguchi, et al, "Multi Chip Module Minimum Parasitic Inductance for New Generation Voltage Regulator", ISPSD Proceedings, May 2005, pp.371-374.
6. ISETCAD Release 9.5.
7. TOSHIBA Datasheet "TPC8A01"