Low stress silicon nitride layers for MEMS applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6415, Issue , 2007, Pages

  Iliescu, Ciprian ^a   Wei, Jiashen ^a   Chen, Bangtao ^a   Ong, Poh Lam ^a   Tay, Francis E H ^a,b  

^a INSTITUTE OF BIOENGINEERING AND NANOTECHNOLOGY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

High frequency; High power; Low stress; PECVD; Silicon nitride

Indexed keywords

COMPRESSIVE STRESS; DISSOCIATION; ETCHING; NATURAL FREQUENCIES; PARAMETER ESTIMATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE;

DEPOSITION RATE; HIGH FREQUENCY; LOW DEPOSITION RATE; MIX FREQUENCY;

MEMS;

EID: 34247516072     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.696350     Document Type: Conference Paper

References (23)

1. Lee J Y M., Sooriakuma K, Dange M M 1991Thin Solid Films 203 275-87.
2. Neumann A, Reske T, Held M, Jahnke K 2004 J. Mater. Sci.: Mater. Med. 15 1135-40.
3. T.A. Desai, D.J. Hansford, L. Leoni, M. Essenpreis, M. Ferrari, Biosensor & Bioelectronics 15, 453 (2000).
4. K.J.Winchester, J.M.Dell, Journal of Micromechine & Microengineering 11, 589 (2001).
5. Machenzie K D, Reelfs B, DeVre M W, Westerman R, Johnson D J 2004 Chip 10, 26-9.
6. Scheeper P R, Olthuis W, Bergveld P 1994 Sensors and Actuators A 40 179-86.
7. Schmid P, Orfert M, Vogt M 1998 Surface and Coating Technology 98 1510-17.
8. Dauksher W J, Resnick D J., Smith S M., Pendharkar S V, Tompkins H G., Cummings K D, Seese P A., Mangat P J S, Chan J A 1997 J. Vac. Sci. Technol. B 15 2232-7.
9. Chitica N, Strassner M, Daleiden J 2000 Appl. Phys. Lett. 77 202-4.
10. Gukel H, Burnst D, Rutigliano C, Lovell E, Choi B 1992 J. Micromech. Microeng. 2 86-95.
11. Lapadatu D, Pyka A, Dziuban J, Puers R 1996 J. Micromech. Microeng. 6 73-6.
12. Tarraf A, Daleiden J, Irmer S, Prasai D, Hillmer H 2004 J. Micromech. Microeng. 14 317-23.
13. van de Ven E P, Connick I W, Harrus A.S 1990 Proc. of the VLSI Multilevel Interconnection Conference (VMIC), Santa Clara, CA, 94-101.
14. Loboda M J, Seifferly J A, 1996 J. Mater. Res. 11 391-8.
15. Wu T H T, et al 1992, Solid State Technology 65
16. Sleeckx E, Schaekers M., Shi X., Kunnen E, Degroote B, Jurczak M, de Potter de ten Broeck M, Augendre E 2005, Microelectronics Reliability 45 865-8.
17. Chung C K, Tsai M.Q, Tsai P H, Lee C 2005 J. Micromech. Microeng. 15/1 136-42.
18. Yan M, Geodheer W J 1999 Plasma Sources Science & Technology 8, 349.
19. Kim B, Hong W S 2004 IEEE Transactions on Plasma Science 32/1 84-9.
20. Smith D L, Alimonda A S, von Preissig F J 1990 J. of Vacuum Science & Technology B: Microelectronics 8 551-7.
21. Hess D W 1984 Journal of Vacuum Science and Technology A 2 244-52.
22. Vossen J L 1979 Journal of the Electrochemical Society 126 319-24.
23. Lee J Y M, Sooriakumar K, Dange M M 1991, Thin Solid Films 203 275-87.