-
1
-
-
32044441649
-
2 = 1.9 at P = 4.4 W
-
2 = 1.9 at P = 4.4 W", IEEE Phot. Tech. Lett. 18, 4, 601-603, 2006.
-
(2006)
IEEE Phot. Tech. Lett
, vol.18
, Issue.4
, pp. 601-603
-
-
Dittmar, F.1
Sumpf, B.2
Fricke, J.3
Erbert, G.4
Tränkle, G.5
-
2
-
-
25444511583
-
Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power
-
M. T. Kelemen, J. Weber, G. Kaufel, G. Bihlmann, R. Moritz, M. Mikulla and G. Weimann, "Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power", Elec. Lett. 41, 18, 1011-1013, 2005.
-
(2005)
Elec. Lett
, vol.41
, Issue.18
, pp. 1011-1013
-
-
Kelemen, M.T.1
Weber, J.2
Kaufel, G.3
Bihlmann, G.4
Moritz, R.5
Mikulla, M.6
Weimann, G.7
-
3
-
-
2942683378
-
Frequency locking and wavelength tuning of nanosecond pulsed broad-area semiconductor lasers
-
Y. Liu, V. Kireev and Y. Braiman, "Frequency locking and wavelength tuning of nanosecond pulsed broad-area semiconductor lasers", Appl. Phys. Lett. 84, 21, 4265-4267, 2005.
-
(2005)
Appl. Phys. Lett
, vol.84
, Issue.21
, pp. 4265-4267
-
-
Liu, Y.1
Kireev, V.2
Braiman, Y.3
-
4
-
-
0036441515
-
Performance of external cavity mode-locked semiconductor lasers employing reverse biased saturable absorbers
-
K. Yvind, P. M. W. Skovgaard, J. Mørk, J. Hanberg and M. Kroh, "Performance of external cavity mode-locked semiconductor lasers employing reverse biased saturable absorbers", Physica Scripta, T101, 129-132, 2002.
-
(2002)
Physica Scripta
, vol.T101
, pp. 129-132
-
-
Yvind, K.1
Skovgaard, P.M.W.2
Mørk, J.3
Hanberg, J.4
Kroh, M.5
-
5
-
-
0030142467
-
High power and narrow lateral far-field divergence 1.5-μm eye-safe pulsed laser diodes with flared waveguide
-
T. Tamanuki, T. Sasaki and M. Kitamura, "High power and narrow lateral far-field divergence 1.5-μm eye-safe pulsed laser diodes with flared waveguide", Opt. Quant. Elec. 28, 513-517, 1996.
-
(1996)
Opt. Quant. Elec
, vol.28
, pp. 513-517
-
-
Tamanuki, T.1
Sasaki, T.2
Kitamura, M.3
-
6
-
-
33746052446
-
-
C. Pfahler, M. Eichhorn, M. T. Kelemen, G. Kaufel, M. Mikulla, J. Schmitz and J. Wagner, Gain saturation and high-power pulsed operation of GaSb-based tapered diode lasers with separately contacted ridge and tapered section, Appl. Phys. Lett. 89, 021107-1-3, 2006.
-
C. Pfahler, M. Eichhorn, M. T. Kelemen, G. Kaufel, M. Mikulla, J. Schmitz and J. Wagner, "Gain saturation and high-power pulsed operation of GaSb-based tapered diode lasers with separately contacted ridge and tapered section", Appl. Phys. Lett. 89, 021107-1-3, 2006.
-
-
-
-
7
-
-
35348990855
-
9 W output power from a 808 nm tapered diode laser in pulse mode operation with nearly diffraction-limited beam quality"
-
submitted
-
F. Dittmar, A. Klehr, B. Sumpf, A. Knauer, J. Fricke, G. Erbert and G. Tränkle, "9 W output power from a 808 nm tapered diode laser in pulse mode operation with nearly diffraction-limited beam quality", J. of Selected Topics in Quant. Electron., submitted, 2007.
-
(2007)
J. of Selected Topics in Quant. Electron
-
-
Dittmar, F.1
Klehr, A.2
Sumpf, B.3
Knauer, A.4
Fricke, J.5
Erbert, G.6
Tränkle, G.7
-
8
-
-
18744417245
-
High-power 808 nm lasers with a super-large optical cavity
-
A. Knauer, G. Erbert, R. Staske, B. Sumpf, H. Wenzel and M. Weyers, "High-power 808 nm lasers with a super-large optical cavity", Semicond. Sci. Technol. 20, 621-624, 2005.
-
(2005)
Semicond. Sci. Technol
, vol.20
, pp. 621-624
-
-
Knauer, A.1
Erbert, G.2
Staske, R.3
Sumpf, B.4
Wenzel, H.5
Weyers, M.6
|